http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0016389-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
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filingDate 1999-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_804b153ecc5a2c80ed41b36602131833
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publicationDate 2000-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-0016389-A1
titleOfInvention Device and method for etching spacers formed upon an integrated circuit gate conductor
abstract A dry etch process is presented wherein a semiconductor substrate (16) is introduced into a reaction chamber (11) between a first electrode (12) and a second electrode (14). The semiconductor substrate (16) may be positioned on the first electrode (12). A main flow of gas that includes an argon flow at an argon flow rate and a fluorocarbon flow at a fluorocarbon flow rate is established into the reaction chamber (11). RF power (22) at a low frequency may then be applied to the first electrode (12) for creating a fluorine-deficient plasma. An oxide layer (38) arranged above the semiconductor substrate (16) is exposed to the fluorine-deficient plasma for etching, in a single step, a portion of the oxide layer (38).
priorityDate 1998-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.