| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a9aad45e5465bd5d3e7e503b2b16c65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_34f252548858a072bad5613506885c7c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2004-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a374e863f18842c1237385d4aae66ca |
| publicationDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-RE44292-E |
| titleOfInvention |
Method of etching silicon nitride by a mixture of CH2F2, CH3F or CHF3 and an inert gas |
| abstract |
There are included steps of forming a silicon nitride layer on a silicon layer or a silicon oxide layer, loading the silicon layer or the silicon oxide layer and the silicon nitride layer in a dry etching atmosphere, and selectively etching the silicon nitride layer with respect to the silicon layer or the silicon oxide layer by flowing a fluorine gas consisting of any one of CH 2 F 2 , CH 3 F, or CHF 3 and an inert gas to the dry etching atmosphere. Hence, in the etching process of the silicon nitride layer, the etching selectivity of the silicon nitride layer to Si or SiO 2 can be enhanced and also etching anisotropy can be enhanced. |
| priorityDate |
1997-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |