| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2017-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b430d0c55244bf7cbcba0b1b633e878f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52c9bd3a461a5c4a9c8e3e11af5311b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d434a402a9a572f40a18893eaddaf23e |
| publicationDate |
2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9972534-B1 |
| titleOfInvention |
Semiconductor devices, through-substrate via structures and methods for forming the same |
| abstract |
A semiconductor device includes a through-substrate via structure, a first metal layer, an electronic component over the through-substrate via structure, a second metal layer and another electronic component below the through-substrate via structure. The through-substrate via structure includes a through hole penetrating from a first surface to an opposite second surface of a semiconductor substrate, and an acute angle is included between a sidewall of the through hole and the second surface on a side of the semiconductor substrate. The through-substrate via structure also includes a conductive layer that fills the through hole, and a semiconductor layer disposed in the through hole and interposed between the conductive layer and the semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110379766-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476197-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110379766-B |
| priorityDate |
2017-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |