| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| filingDate |
2016-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47751168cd70da1e401d4f968d7428d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29b7a71bfaca7406b7f4d81c68b94147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3f6dbc4eb3a7ceccb7200d0e5c653c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f81fa53f81fcf334d9de9716449be03f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d0300fc34d11fed86987c27c40d05d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b677bc4a1f73cd7f159c330622495ac |
| publicationDate |
2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9972499-B2 |
| titleOfInvention |
Method for forming metal-semiconductor alloy using hydrogen plasma |
| abstract |
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a front surface and a back surface; forming a transition metal layer on a surface of the semiconductor substrate; and exposing the semiconductor substrate having the transition metal layer formed thereon to a hydrogen plasma atmosphere formed by microwaves, to cause the transition metal layer to generate heat. During exposure of the semiconductor substrate, a portion of the semiconductor substrate contacting the transition metal layer is heated by a transfer of heat from the transition metal layer and, at an interface of the transition metal layer and the semiconductor substrate, an ohmic contact is formed by reaction of the transition metal layer and the semiconductor substrate, such as to form a transition metal silicide when the semiconductor substrate is silicon carbide. The ohmic contact provides a lower contact resistivity and device properties can be prevented from degrading. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019207866-A1 |
| priorityDate |
2014-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |