Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2017-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df167ed90925d73c35d006500ef4e01c |
publicationDate |
2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9966447-B2 |
titleOfInvention |
Method of manufacturing semiconductor device by plasma treatment and heat treatment, and semiconductor device |
abstract |
A technique of manufacturing a semiconductor device of stable operation is provided. There is provided a method of manufacturing a semiconductor device comprising a first process of forming an insulating film from a nitrogen-containing organic metal used as raw material, on a semiconductor layer by atomic layer deposition; a second process of processing the insulating film by oxygen plasma treatment in an atmosphere including at least one of oxygen and ozone; and a third process of processing the insulating film by heat treatment in a nitrogen-containing atmosphere, after the second process. |
priorityDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |