| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-005 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-56 |
| filingDate |
2015-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f97fe77a670131a7e9fc8cb3f5c3ce2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0753218c46835e9b576fdafda491dba6 |
| publicationDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9954152-B2 |
| titleOfInvention |
Method for producing semiconductor light-emitting device |
| abstract |
A method for producing a semiconductor light-emitting device involves applying a silicone resin composition to a surface of a semiconductor light-emitting element and forming an encapsulating portion covering the surface of the light-emitting element by heat curing the applied resin composition. The silicone resin composition contains at least 60% by mass of a silicone resin in which the constituent silicon atoms are substantially only silicon atoms to which three oxygen atoms are bonded. The heat curing satisfies 5<a−b<20, in which “a cm −1 ” is an infrared absorption spectrum peak position assigned to Si—O—Si linkages in a range from 1,000 to 1,050 cm −1 of the silicone resin before the heat curing and “b cm −1 ” is an infrared absorption spectrum peak position assigned to Si—O—Si linkages in a range from 950 to 1,050 cm −1 of the silicone resin composition after the heat curing. |
| priorityDate |
2014-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |