| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed64f83b4bca2542973a5224ce585cec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4716500d7df9dbd448a1cfea7a162061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_56541df79a26070c6c2c585b54af47c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1383b971e72512c99358b5b7020a424f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da5f1f8151e894a31e07e7722aba3dc0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f68dc565cd5e0e4e986cb12c32a70b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb85fcc5c5eac76c62b27c456fae2e1a |
| publicationDate |
2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9947527-B2 |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
A method of manufacturing a semiconductor device according to the invention includes the step S 1 of cleaning the silicon carbide substrate 1 surface, the step S 2 of bringing a material gas into a plasma and irradiating the atoms contained in the material gas to silicon carbide substrate 1 for growing silicon nitride film 2 on silicon carbide substrate 1 , the step S 3 of depositing silicon oxide film 3 on silicon nitride film 2 by the ECR plasma CVD method, and the step S 4 of annealing silicon carbide substrate 1 including silicon nitride film 2 and silicon oxide film 3 formed thereon in a nitrogen atmosphere. By the method of manufacturing a semiconductor device according to the invention, a semiconductor device that exhibits excellent interface properties including an interface state density and a flat band voltage is obtained. |
| priorityDate |
2011-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |