| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10fa2c9dde3aafd068b8e6ab758791a8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate |
2004-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55c952a4d45a8adc3b609a430e7836da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_518e276cf7d55f57f67b9fd4d7a824ce |
| publicationDate |
2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006214224-A1 |
| titleOfInvention |
Semiconductor device and process for producing the same |
| abstract |
A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9390913-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947527-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7641736-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9646823-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007051301-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014239418-A1 |
| priorityDate |
2003-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |