Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
filingDate |
2016-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b216a1fbec3e4bdacbad393880bc2188 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb |
publicationDate |
2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9923083-B1 |
titleOfInvention |
Embedded endpoint fin reveal |
abstract |
A method for fabricating a semiconductor structure includes forming a cut mask over a set of fin hard masks formed on a substrate. At least one gap defined at least in part by the cut mask is formed, and a first dielectric layer is formed within the at least one gap. A plurality of fins is formed, and the first dielectric layer is recessed to form an isolation region. A liner is deposited along exposed surfaces of the recessed first dielectric layer and the plurality of fins. A second dielectric layer is formed within a region defined by the liner and the plurality of fins. At least a portion of the second dielectric layer is removed to reveal the plurality of fins, wherein the portion of the second dielectric layer that is removed is based on the liner serving as an endpoint layer. |
priorityDate |
2016-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |