| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2017-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2b16337882c37b12eca7f425dd9100c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7848ad9b26531b904fcfc6b59d3f2341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09f58150543c6c9de8772a6219a8b57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df922e5f172b988a8f9d68549f0c9b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22749af96ebc50a82eb4bc0112ff3754 |
| publicationDate |
2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9922927-B2 |
| titleOfInvention |
Method and apparatus for forming self-aligned via with selectively deposited etching stop layer |
| abstract |
A first conductive element is disposed in a first dielectric layer. An etching stop layer is disposed on the first dielectric layer but not on the first conductive element. A first metal capping layer segment is disposed on the first conductive element but not on the first dielectric layer. The etching stop layer has a greater thickness than the first metal capping layer segment. A first segment of a second conductive element is disposed on the first metal capping layer segment. A second segment of the second conductive element is disposed over the first segment of the second conductive element and partially over the etching stop layer. A third conductive element is disposed over the second conductive element. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2273754-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11315828-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018211911-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867913-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532552-B2 |
| priorityDate |
2015-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |