Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2018-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22749af96ebc50a82eb4bc0112ff3754 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2b16337882c37b12eca7f425dd9100c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df922e5f172b988a8f9d68549f0c9b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09f58150543c6c9de8772a6219a8b57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7848ad9b26531b904fcfc6b59d3f2341 |
publicationDate |
2018-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2018211911-A1 |
titleOfInvention |
Method and apparatus for forming self-aligned via with selectively deposited etching stop layer |
abstract |
A first layer is located over a substrate. The first layer includes a first dielectric component and a first conductive component. A first etching stop layer is located over the first dielectric component. A metal capping layer is located over the first conductive component. A second etching stop layer is located over the first etching stop layer and over the metal capping layer. A second layer is located over the second etching stop layer. The second layer includes a second dielectric component and a second conductive component. A third conductive component electrically interconnects the second conductive component to the first conductive component. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978554-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094588-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021046212-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475796-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532552-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886278-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069613-B2 |
priorityDate |
2015-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |