| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caf025faa401ef4e4eee2223956db24e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e440e4edf15a733e065224a682cad03f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbb2f7468a3f47743c4688b31ebcbe8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dc097bd3d20e97c619af7e2404d677b |
| publicationDate |
2018-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9905471-B2 |
| titleOfInvention |
Integrated circuit structure and method forming trenches with different depths |
| abstract |
A method includes depositing an ESL on a substrate; patterning the ESL such that a first region of the substrate is covered thereby and a second region of the substrate is exposed within an opening of the etch stop layer; depositing a first dielectric layer on the ESL in the first region and on the substrate in the second region; patterning the first dielectric layer to form a first trench through the first dielectric layer in the first region; forming a metal feature in the first trench; depositing a second dielectric layer over the metal feature in the first region and over the first dielectric layer in the second region; and performing a patterning process to form a second trench through the second dielectric layer in the first region, and to form a third trench through the second and first dielectric layers in the second region. |
| priorityDate |
2016-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |