abstract |
Replacement chemistries for the cC 4 F 8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula C x H y F z , with 1 ≦x<7, 1≦y≦13, and 1≦z≦13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching. |