| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f19004aeede7457e59832f58e115b25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-0044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-0017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-247 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-422 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-42 |
| filingDate |
2015-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca9b59b18b5bfe2f72f5a8a849320c5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36bdf650fed67d0bec934f7bc097d6df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c02a8aec15f46e10a0c3cfe30a7206b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00dd5eeb2573b118a373b9c4712a3beb |
| publicationDate |
2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9888585-B2 |
| titleOfInvention |
Method for manufacturing wiring structure, copper displacement plating solution, and wiring structure |
| abstract |
Adhesion of an underlying diffusion barrier metal film and an electroless copper plating film with respect to an insulating film can be improved. A method for manufacturing a wiring structure includes a process of forming the underlying diffusion barrier metal film 5 , including a base metal with respect to copper, on the insulating film 1 ; and a process of forming the electroless copper plating film 6 on the underlying diffusion barrier metal film 5 by performing an electroless copper displacement plating process with a copper displacement plating solution. The copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained. |
| priorityDate |
2014-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |