| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P80-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2016-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10324d47fc9cbb0d6d5d341db138d7b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81388582b1b234325fcebc43d5182e37 |
| publicationDate |
2018-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9859165-B1 |
| titleOfInvention |
Planarization process for forming semiconductor device structure |
| abstract |
A method for forming a semiconductor device structure is provided. The method includes receiving a structure having a first portion and a second portion, and a top surface of the first portion is higher than a top surface of the second portion. The method also includes forming a first material layer over the first portion and the second portion of the structure and forming a first material layer over the first portion and the second portion of the structure. The method further includes thinning the second material layer until the first material layer is exposed and removing a portion of the second material layer over the second portion of the structure to expose the first material layer thereunder. In addition, the method includes thinning the first material layer to expose the structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019165114-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515955-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133307-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022085189-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127741-B2 |
| priorityDate |
2016-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |