| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c25903cd1f12912c8f0690fdc569efa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0dbef7cb55f0f20bfd851ff95c75267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_360dd24a2b6525968a74b4af37cdd66a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_407911ae5724be19aacf3ce255e3725a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef8c2d5fa0a9202398ef4e70de65119a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b546c229cd5f090876a2d6657b4b5a65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec2a2cb56440e34d3bd0cb7406e5e92c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8ca3b51a69410368d7f8ebc2af4ecca |
| publicationDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9818834-B2 |
| titleOfInvention |
Semiconductor device structure and method for forming the same |
| abstract |
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of the dielectric layer is under the first hole. The method includes forming a first protection layer over the gate stack and the spacer layer. The method includes forming a second protection layer over the first protection layer. The second protection layer includes a metal compound material, and the first protection layer and the second protection layer includes a same metal element. The method includes removing the second portion of the dielectric layer to form a through hole. The method includes forming a conductive contact structure in the through hole. |
| priorityDate |
2016-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |