| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3e3e0e2a450375b8c45205fd01f1431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4abdc4fed9f5690ece3e4cc124d3c2c8 |
| publicationDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9786546-B1 |
| titleOfInvention |
Bulk to silicon on insulator device |
| abstract |
A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. An etch stop layer is deposited on the first insulator layer. A gate stack is formed over a channel region of the fin and over portions of the etch stop layer. A portion of the bulk semiconductor substrate is removed to expose portions of the etch stop layer and the fin, and a second insulator layer is deposited over exposed portions of the fin and the etch stop layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11295958-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037834-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018083134-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019393098-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10608080-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529624-B2 |
| priorityDate |
2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |