| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d797e306956a0a5041d60d4c9f15451
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e033423c99023f30843a39bd7c058c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32899
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32596
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32889 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate |
2011-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f32629ecba44f87690c91bcfedadfd9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13a85440b1bf7d06b390c71a548510c3 |
| publicationDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9786471-B2 |
| titleOfInvention |
Plasma etcher design with effective no-damage in-situ ash |
| abstract |
In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials. |
| priorityDate |
2011-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |