| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C25-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 |
| filingDate |
2015-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39875b4af4fd92ef135f51a7bd7d91f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0548d07aafea58ca31c2952a734d854
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8eecb3dfd37b935fd0fd7f92c059ac9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd6492fbac04e825bb41b2ff08db640b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_334da03be1dd2b12583d714af01ff6f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb75459aea55e9579cde3c48ed3bc5d3 |
| publicationDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9779961-B2 |
| titleOfInvention |
Etching method |
| abstract |
Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated. |
| priorityDate |
2014-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |