| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2017-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd1392e18c2a73cafa4207aea5fbeffc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e4cc1576bae6c0614e5f9ee82a967b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4c64fd4244850e7b9c88361fa375356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc19ae7ab8e573e0d28061c33ae06f77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8e9b3ded7bfb5dab91f627cfdb3a9af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff824c2353a62b38600092f517857058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_713e9674bc2882875eab47e31c93b867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd2d329a53c6778f6dd4fab404517c6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f4ea022fc40b1c0bef0f4875c7b63ed |
| publicationDate |
2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9768300-B2 |
| titleOfInvention |
Semiconductor devices including a stressor in a recess and methods of forming the same |
| abstract |
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10332981-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022093616-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10446667-B2 |
| priorityDate |
2012-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |