| abstract |
A semiconductor device ( 1001 ) includes: a first transistor ( 10 A) having a first channel length L 1 and a first channel width W 1 ; and a second transistor ( 10 B) having a second channel length L 2 and a second channel width W 2 , wherein the first transistor ( 10 A) and the second transistor ( 10 B) include an active layer formed from a common oxide semiconductor film, the first transistor ( 10 A) is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current Isd depends on a gate voltage Vg to a resistor state where the drain current Isd does not depend on the gate voltage Vg, and the first channel length L 1 is smaller than the second channel length L 2. |