http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1197556-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112 |
| filingDate | 1997-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f58313596dd279d14e3ec5ba1cdb17a |
| publicationDate | 1999-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H1197556-A |
| titleOfInvention | Thin film semiconductor device and IC card, manufacturing method thereof, writing and reading method, and electronic equipment |
| abstract | (57) Abstract: Provided are a thin film semiconductor device and an IC card utilizing a change in threshold voltage of a thin film transistor formed of a non-single-crystal semiconductor, a method for manufacturing the same, a method for reading / writing, and an electronic device. thing. A write voltage or a read voltage is applied to a selected memory cell from a word line, and a non-write voltage or a non-read voltage is applied to a non-selected memory cell from a word line. , Memory transistor 1 When the write voltage is applied and the drain current flows, the threshold voltage becomes the first channel length and channel width. Is set so as to change from the first voltage to the second voltage. When the threshold voltage is the first voltage (erased state), the memory transistor 12 is turned on and the threshold voltage is changed to the second voltage. At the time of voltage (writing state), the voltage is set to a voltage at which the memory transistor 12 is turned off. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005011495-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6814832-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9754978-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011049593-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9607996-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6887650-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015053010-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859016-B2 |
| priorityDate | 1997-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.