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filingDate 2015-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea5f1b2b19c83b966a7731ae027dffac
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publicationDate 2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9748233-B2
titleOfInvention Semiconductor device and method for fabricating the same
abstract A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate.
priorityDate 2015-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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