| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| filingDate |
2013-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b5061388d9ef886dc0ab0bcd92c6d71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d80c3ff72975a91362bf45e2c7e4bdfb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b65c100d7a0e1c4f778dcf099b89b91 |
| publicationDate |
2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9741560-B2 |
| titleOfInvention |
Method of growing nitride semiconductor layer |
| abstract |
A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017162398-A1 |
| priorityDate |
2012-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |