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publicationDate 2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9716032-B2
titleOfInvention Via-free interconnect structure with self-aligned metal line interconnections
abstract The present disclosure provides a method for forming a semiconductor device. The semiconductor device includes a first conductive line disposed over a substrate. The first conductive line is located in a first interconnect layer and extends along a first direction. The semiconductor device includes a second conductive line and a third conductive line each extending along a second direction different from the first direction. The second and third conductive lines are located in a second interconnect layer that is different from the first interconnect layer. The second and third conductive lines are separated by a gap that is located over or below the first conductive line. The semiconductor device includes a fourth conductive line electrically coupling the second and third conductive lines together. The fourth conductive line is located in a third interconnect layer that is different from the first interconnect layer and the second interconnect layer.
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