Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
filingDate |
2014-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad17a53f9778fc14c1d304d5a07dd67b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_915764681e0d50a47ac9651097b4e07e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a58c8d76a65fcd81a8b275547e1b47ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4caed5e31daa8009b226d2e9e955f90c |
publicationDate |
2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9716032-B2 |
titleOfInvention |
Via-free interconnect structure with self-aligned metal line interconnections |
abstract |
The present disclosure provides a method for forming a semiconductor device. The semiconductor device includes a first conductive line disposed over a substrate. The first conductive line is located in a first interconnect layer and extends along a first direction. The semiconductor device includes a second conductive line and a third conductive line each extending along a second direction different from the first direction. The second and third conductive lines are located in a second interconnect layer that is different from the first interconnect layer. The second and third conductive lines are separated by a gap that is located over or below the first conductive line. The semiconductor device includes a fourth conductive line electrically coupling the second and third conductive lines together. The fourth conductive line is located in a third interconnect layer that is different from the first interconnect layer and the second interconnect layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581256-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276637-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742210-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335596-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475768-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018130780-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916498-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11652063-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11652149-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11658215-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355442-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11036911-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950577-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11387331-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11139236-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127684-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264326-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11251118-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450609-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978337-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114374-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11631639-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508695-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532547-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257926-B2 |
priorityDate |
2012-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |