http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9689912-B2

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filingDate 2012-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30fb55910e9b00b76a7424b7ffae4247
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publicationDate 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9689912-B2
titleOfInvention Rapid analysis of buffer layer thickness for thin film solar cells
abstract A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell.
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