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Object |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66484
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7391
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| filingDate |
2015-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad5f843995d9d63b7259ebc144e80377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f573ba82e6ec2511e613818ba78ed2d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25bbfb8c0b2a5cca598af3c89eef52e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_687f18cd9117c8394553924b5694b836 |
| publicationDate |
2017-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9647098-B2 |
| titleOfInvention |
Thermionically-overdriven tunnel FETs and methods of fabricating the same |
| abstract |
A field effect transistor (FET) includes a nanosheet stack having first and second stacked semiconductor channel layers. The first channel layer defines a channel region of a tunnel FET, and the second channel layer defines a channel region of a thermionic FET. Source and drain regions are provided on opposite sides of the nanosheet stack such that the first and second channel layers extend therebetween. A first portion of the source region adjacent the first channel layer and a second portion of the source region adjacent the second channel layer have opposite semiconductor conductivity types. Related fabrication and operating methods are also discussed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019393306-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10374065-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756837-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853132-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11710738-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651291-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11670680-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021057553-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388755-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622466-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705503-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211456-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069681-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I777359-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10566330-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017141207-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10411695-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019181140-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692993-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017352739-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757042-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11362091-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018343006-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11710780-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11735634-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319846-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243054-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11474134-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11121232-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10586856-B2 |
| priorityDate |
2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |