| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_543d1538a8ce3bf1ed24b0d187bc27b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9824b05e5d21c20311308195c8efa7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f9eb36341dc1cbe3519adccbe0a1c21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06e359ce7ccd72a9fb19b322f2ba39d9 |
| publicationDate |
2017-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9553012-B2 |
| titleOfInvention |
Semiconductor structure and the manufacturing method thereof |
| abstract |
The present disclosure provides a FinFET. The FinFET includes a silicon-on-insulator (SOI) with an insulator; a plurality of fin structures on the insulator; an isolation on the insulator, and between two adjacent fin structures in the plurality of fin structures; and an oxide layer between each of the plurality of fin structures and the insulator, wherein the insulator comprises silicon germanium oxide. A method for manufacturing the FinFET includes forming a plurality of fin structures on a layer having a larger lattice constant than that of the fin structure by a patterning operation; oxidizing the fin structure and the layer to transform the layer into a first oxide layer; filling insulating material between adjacent fin structures; and etching the insulating material to expose a top surface and at least a portion of a sidewall of the fin structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930734-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734245-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11024711-B2 |
| priorityDate |
2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |