Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5ad48dc1266dcaa419573620030bca9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceccab1ac4d8d3700908a7e77ac574f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa33aca5b1c25b0a70dedaf4facba75b |
publicationDate |
2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11024711-B2 |
titleOfInvention |
Nanosheet FET bottom isolation |
abstract |
A technique relates to a semiconductor device. A rare earth material is formed on a substrate. An isolation layer is formed at an interface of the rare earth material and the substrate. Channel layers are formed over the isolation layer. Source or drain (S/D) regions are formed on the isolation layer. |
priorityDate |
2018-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |