Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 |
filingDate |
2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99d42c81f9c077a3e63d742cdfa1a0f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_716392037253909dbdd21bb4c3d18c0e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10405aab09049d1339a9d689f0690234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0911d843fa00fac7e9f5bbd4462c2cb1 |
publicationDate |
2017-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9536964-B2 |
titleOfInvention |
Method for forming via profile of interconnect structure of semiconductor device structure |
abstract |
A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric layer over the first metal layer. The method includes forming an antireflection layer over the dielectric layer, forming a hard mask layer over the antireflection layer and forming a patterned photoresist layer over the hard mask layer. The method includes etching a portion of the antireflection layer by performing a first etching process and etching through the antireflection layer and etching a portion of the dielectric layer by performing a second etching process. The method includes etching through the dielectric layer by performing a third etching process to form a via portion on the first metal layer. The via portion includes a first sidewall and a second sidewall, and the slope of the first sidewall is different from that of the second sidewall. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022359379-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764149-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930509-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017194197-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997401-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475739-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424182-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10431673-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354955-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773735-B1 |
priorityDate |
2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |