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publicationDate 2017-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9536825-B2
titleOfInvention Semiconductor device and method for fabricating the same
abstract A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.
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