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filingDate 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab3a3ece10e6c802a0f9de17316bd564
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publicationDate 2016-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9497852-B2
titleOfInvention High-frequency circuit substrate
abstract The invention offers a high-frequency circuit substrate that sufficiently decreases the transmission delay and transFmission loss in comparison with the conventional high-frequency circuit substrate. In the offered high-frequency circuit substrate, a dielectric layer made of fluororesin is brought into intimate contact directly with a metal conductor that is used for wiring and that has a surface not subjected to coarsening treatment or primer treatment. The offered high-frequency circuit substrate causes a transmission loss of −3 dB/m or less at a frequency of 1 GHz and has a combined specific inductive capacity of 2.6 or less and a combined dielectric loss tangent of 0.0007 or less.
priorityDate 2011-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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