| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_858627e6ebad6f5424973862df33ca04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba80a52b822c2a7e7a31cc8844e59f73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b5f7d494a942a7f15c285d52e49c439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c94882694946e178d456e98d4a2e75f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_307c2ca78b6e2c9bc8995418a54fbfca |
| publicationDate |
2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9484427-B2 |
| titleOfInvention |
Field effect transistors having multiple effective work functions |
| abstract |
Selective deposition of a silicon-germanium surface layer on semiconductor surfaces can be employed to provide two types of channel regions for field effect transistors. Anneal of an adjustment oxide material on a stack of a silicon-based gate dielectric and a high dielectric constant (high-k) gate dielectric can be employed to form an interfacial adjustment oxide layer contacting a subset of channel regions. Oxygen deficiency can be induced in portions of the high-k dielectric layer overlying the interfacial adjustment oxide layer by deposition of a first work function metallic material layer and a capping layer and a subsequent anneal. Oxygen deficiency can be selectively removed by physically exposing portions of the high-k dielectric layer. A second work function metallic material layer and a gate conductor layer can be deposited and planarized to form gate electrodes that provide multiple effective work functions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11652006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020058558-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016133740-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11201094-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9716177-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302794-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11244872-B2 |
| priorityDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |