Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2ba4e52a3acb132ca8cc2a235133f629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_29a60d9a881e0260b0793cb202f64e3b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-115 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
filingDate |
2014-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13dc47aed764169816bbbabf2a9b25b4 |
publicationDate |
2016-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9469800-B2 |
titleOfInvention |
Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same |
abstract |
Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11745302-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11524384-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11772229-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11724362-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11446788-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11471999-B2 |
priorityDate |
2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |