patent/US-9443829-B2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9443829-B2

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filingDate	2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdfa8cbc02d120713e53beb7538abdfc
publicationDate	2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-9443829-B2
titleOfInvention	Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structure
abstract	A semiconductor device has a first interconnect structure. A first semiconductor die has an active surface oriented towards and mounted to a first surface of the first interconnect structure. A first encapsulant is deposited over the first interconnect structure and first semiconductor die. A second semiconductor die has an active surface oriented towards and mounted to a second surface of the first interconnect structure opposite the first surface. A plurality of first conductive pillars is formed over the second surface of the first interconnect structure and around the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and around the plurality of first conductive pillars. A second interconnect structure including a conductive layer and bumps are formed over the second encapsulant and electrically connect to the plurality of first conductive pillars and the first and second semiconductor die.
priorityDate	2009-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 104.