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filingDate 2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9412609-B1
titleOfInvention Highly selective oxygen free silicon nitride etch
abstract A method for selectively etching silicon nitride with respect to silicon oxide is provided. An oxygen free silicon nitride etch gas comprising H 2 and either CF 4 or C X H Y F Z (X≧1, Y≧1, Z≧1) is provided. An RF power is provided to form the etch gas into a plasma, wherein the silicon nitride is exposed to the plasma.
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