Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
classificationCPCInventive |
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classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3215 |
filingDate |
2015-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9b5552e3644348eef86d4c47f435652 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0224f1bd629ad47b83575246d4a378f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcb9301601fd66d2388d3e4bc6267c35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_affc66e779176bfb3d2d4a9e56fa7c57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_257f7601001f64c09823913d39577e01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcaca68d6d4c53b6ea35d30f71271fc6 |
publicationDate |
2016-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9397180-B1 |
titleOfInvention |
Low resistance sinker contact |
abstract |
An semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material. A method for forming a semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256135-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018261495-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417369-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110832617-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037816-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112599600-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114999922-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403725-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018165809-A1 |
priorityDate |
2015-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |