http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9376764-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3f2cd060d0a72e06fe5ac3249c29e3e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-06 |
| filingDate | 2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3f2cc913a7f2578d05b8542785baa88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6d819b2f9e98bd2096790dadcf3ef09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73a87b669b368a2ffc93fb3b35cc2862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fef0c14a900505e337d052b756dfb20 |
| publicationDate | 2016-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9376764-B2 |
| titleOfInvention | Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing |
| abstract | The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane. |
| priorityDate | 2012-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.