| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_746ea9fd3c21bb3a748aa98fc9912a51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e30eb2defa098980f6223f5af9d5869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 |
| publicationDate |
2016-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9368512-B1 |
| titleOfInvention |
Double diamond shaped unmerged epitaxy for tall fins in tight pitch |
| abstract |
A semiconductor structure is provided that includes a semiconductor fin extending upwards from a surface of a substrate. A source/drain structure is located on each side of the semiconductor fin. The source/drain structure comprises an upper source/drain portion having a faceted topmost surface and located on an upper portion of the semiconductor fin, and a lower source/drain portion having a faceted topmost surface and located on a lower portion of the semiconductor fin. In accordance with the present application, upper source/drain portion of the source/drain structure is spaced apart from the lower source/drain portion of the source/drain structure by a dielectric spacer portion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018331215-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094801-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269983-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10262904-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10396198-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164785-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559690-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10181524-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10896976-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647120-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522678-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11244943-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016365362-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930779-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019051751-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9704883-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11328988-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424323-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170582-B1 |
| priorityDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |