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filingDate 2014-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5311a1b548c8dc02c4b2dd7b7450b667
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publicationDate 2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9362131-B2
titleOfInvention Fast atomic layer etch process using an electron beam
abstract An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.
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