| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_305e0761de070a32611748c3ddb52d61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a04ec82c01a5765a0fb9c6c0d8a9abba |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2009-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa07b6c6257fb4860ae1bfda0d5aed27 |
| publicationDate |
2016-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9355860-B2 |
| titleOfInvention |
Method for achieving uniform etch depth using ion implantation and a timed etch |
| abstract |
A method of performing a timed etch of a material to a precise depth is provided. In this method, ion implantation of the material is performed before the timed etch. This ion implantation process substantially enhances the etch rate of the material within a precisely controlled depth range corresponding to the range of implantation-induced damage. By using the ion implantation, the variation in vertical etch depth can be reduced by a factor approximately equal to the etch rate of the damaged material divided by the etch rate of the undamaged material. The vertical etch depth can be used to provide a vertical dimension of a non-planar semiconductor device. Minimizing vertical device dimension variations on a wafer can reduce device and circuit performance variations, which is highly desirable. |
| priorityDate |
2006-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |