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publicationDate 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013228871-A1
titleOfInvention Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
abstract A semiconductor device which includes a first gate structure on a substrate and a second gate structure on the substrate is provided. The semiconductor device further includes an inter-level dielectric (ILD) layer on the substrate between the first gate structure and the second gate structure, wherein a top portion of the ILD layer has a different etch selectivity than a bottom portion of the ILD layer.
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