| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ef4885f2c6fb41d8f1c2c3dc45e6794
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a57b7d5af9ec42673b89b1f25488a1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bfdcd8dfbe47fde2248d9e4358752a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d259b865390527410f2e2865d310b1 |
| publicationDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9324813-B2 |
| titleOfInvention |
Doped zinc oxide as N+ layer for semiconductor devices |
| abstract |
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type layer is formed on or in the p-doped layer. The n-type layer includes ZnO on the p-doped layer to form an electronic device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653570-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10158039-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016190260-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016240610-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9722033-B2 |
| priorityDate |
2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |