| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47J2203-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65D65-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D17-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D17-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47J31-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-3942
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A47J31-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D17-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-12 |
| filingDate |
2014-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb0da19699ced5ecdb000f57135b8925
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b29e5429a4f08e4648420425dd9be9e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7a860101e2bec417c810160aae739f4 |
| publicationDate |
2016-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9320387-B2 |
| titleOfInvention |
Sulfur doped carbon hard masks |
| abstract |
Provided are methods of forming ashable hard masks (AHMs) with high etch selectivity and low hydrogen content using plasma enhanced chemical vapor deposition. Methods involve exposing a first layer to be etched on a semiconductor substrate to a carbon source and sulfur source, and generating a plasma to deposit a sulfur-doped AHM or amorphous carbon-based film on the first layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10643858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589799-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9618846-B2 |
| priorityDate |
2013-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |