| abstract |
A carbon hard mask ( 62 ) for patterning an aluminum layer ( 58 ) in a microelectronics device ( 50 ). The carbon hard mask will release carbon during a reactive ion etch process, thereby eliminating the need to use CHF 3 as a passivation gas. Portions of the carbon hard mask remaining after the RIE process are removed during the subsequent strip passivation process without the need for a separate mask removal step. |