http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9296947-B2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6de76612950cbc9c93d9245a859fa036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f22326f2e917aa1e500b5d686aa08f65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f7f120efe096284c7389702c969cf3d
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08
filingDate 2012-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44630e7a160d28415c7e683297d89d42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00e24ab1df76eb456936ebfc3a36dfb
publicationDate 2016-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9296947-B2
titleOfInvention Plasma etching gas and plasma etching method
abstract The present invention is an etching gas comprising an unsaturated fluorohydrocarbon represented by C x H y F z (wherein x=3, 4, or 5, y+z≦2x, and y>z) and a method comprising selectively etching a silicon nitride film relative to a silicon oxide film or a silicon film using the etching gas. According to the present invention, a silicon nitride film stacked on a silicon oxide film or a silicon film can be highly selectively etched.
priorityDate 2011-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04170026-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006514783-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011044740-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001005634-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011068086-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001250817-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004034445-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002016050-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4529476-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009123038-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID12385577
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID310982130
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117641577
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID348084298
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID223743528
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID226394110
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID223750693
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID69389
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID226393766
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11130

Total number of triples: 47.