| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate |
2015-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_684f0f3d4c3a0468480fdd1a3cb66fa5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70311e3ba556e5eaef73607c6e815fc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8e72c13c01e79da1e3d76dc7c68726f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7346958bdb1a97755a735f94fbef8c2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2422ecabb425f5aa2b37be8472dae623 |
| publicationDate |
2016-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9263632-B2 |
| titleOfInvention |
Semiconductor light emitting device |
| abstract |
According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion. |
| priorityDate |
2011-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |