| abstract |
A GaN-based semiconductor light emitting device 11 a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13 a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15 , an active layer 17 , an electron blocking layer 27 , and a contact layer 29 . The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×10 7 cm −2 or less. In the GaN-based semiconductor light emitting device 11 a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated. |