http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9190283-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_799133a40cd04e391f4c95be2de43cc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f371d9ffb8acac81e489ca7297f47ead http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0aa485d286850898ac84bdb906bc1a41 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-32 |
| filingDate | 2012-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed772e2fd0f47385c6671bdce1a85416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e06c47d11c2b8860c021728dcf87191a |
| publicationDate | 2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9190283-B2 |
| titleOfInvention | Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method |
| abstract | The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. n The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing:n at least one metal salt of nickel or cobalt; at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. nn The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition. |
| priorityDate | 2011-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.