http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2935713-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0aa485d286850898ac84bdb906bc1a41 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1893 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-40 |
| filingDate | 2008-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fec44cb6142278f913a9e75a1c079099 |
| publicationDate | 2010-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2935713-A1 |
| titleOfInvention | PROCESS FOR REPAIRING BARRIER LAYERS TO COPPER DIFFUSION ON SEMICONDUCTOR SOLID SUBSTRATE; REPAIR KIT FOR CARRYING OUT SAID METHOD |
| abstract | A method of repairing barrier layers to copper diffusion on a semiconductor solid substrate; repair kit for carrying out this method. The present invention relates to a method of repairing a surface of a substrate coated with a discontinuous copper diffusion barrier layer made of a titanium material. According to the invention, this process comprises: a) bringing the surface into contact with a suspension containing copper or copper alloy nanoparticles for a period of between 1 s and 15 min; b) bringing the surface thus treated into contact with a liquid solution having a pH of between 8.5 and 12 and containing: at least one metal salt; at least one reducing agent; at least one stabilizing agent; at a temperature between 50 ° C and 90 ° C, preferably between 60 ° C and 80 ° C, for a period of between 30 s and 10 min, preferably between 1 min and 5 min to thereby form a metal film having a thickness of at least 50 nanometers restoring the continuity of the copper diffusion barrier layer. Application: Manufacture of Interconnect Elements in Integrated Circuits |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9190283-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012150133-A2 |
| priorityDate | 2008-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 82.